Please use this identifier to cite or link to this item: http://hdl.handle.net/2067/32724
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dc.contributor.authorValentini, L.en
dc.contributor.authorLozzi, L.en
dc.contributor.authorSalerni, V.en
dc.contributor.authorArmentano, Ilariaen
dc.contributor.authorKenny, J. M.en
dc.contributor.authorSantucci, S.en
dc.date.accessioned2020-10-20T22:49:45Z-
dc.date.available2020-10-20T22:49:45Z-
dc.date.issued2003en
dc.identifier.urihttp://hdl.handle.net/2067/32724-
dc.titleEffect of Thermal Annealing on the Electronic Properties of Nitrogen Doped Amorphous Carbon/p-Type Crystalline Silicon Heterojunction, Diodesen
dc.typearticleen
dc.identifier.doi10.1116/1.1562477en
dc.relation.issn15531813en
dc.relation.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A, AN INTERNATIONAL JOURNAL DEVOTED TO VACUUM, SURFACES, AND FILMSen
dc.relation.firstpage582en
dc.relation.lastpage588en
dc.relation.numberofpages7en
dc.relation.conferencenameJOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A, AN INTERNATIONAL JOURNAL DEVOTED TO VACUUM, SURFACES, AND FILMSen
dc.relation.volume21en
dc.relation.issue21en
dc.type.miur262en
item.fulltextNo Fulltext-
item.openairetypearticle-
item.grantfulltextnone-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
crisitem.journal.journalissn1553-1813-
crisitem.journal.anceE191099-
Appears in Collections:A1. Articolo in rivista
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