Please use this identifier to cite or link to this item: http://hdl.handle.net/2067/32724
Title: Effect of Thermal Annealing on the Electronic Properties of Nitrogen Doped Amorphous Carbon/p-Type Crystalline Silicon Heterojunction, Diodes
Authors: Valentini, L.
Lozzi, L.
Salerni, V.
Armentano, Ilaria 
Kenny, J. M.
Santucci, S.
Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A, AN INTERNATIONAL JOURNAL DEVOTED TO VACUUM, SURFACES, AND FILMS 
Issue Date: 2003
URI: http://hdl.handle.net/2067/32724
DOI: 10.1116/1.1562477
Appears in Collections:A1. Articolo in rivista

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