Please use this identifier to cite or link to this item:
http://hdl.handle.net/2067/32724| Title: | Effect of Thermal Annealing on the Electronic Properties of Nitrogen Doped Amorphous Carbon/p-Type Crystalline Silicon Heterojunction, Diodes | Authors: | Valentini, L. Lozzi, L. Salerni, V. Armentano, Ilaria Kenny, J. M. Santucci, S. |
Journal: | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A, AN INTERNATIONAL JOURNAL DEVOTED TO VACUUM, SURFACES, AND FILMS | Issue Date: | 2003 | URI: | http://hdl.handle.net/2067/32724 | DOI: | 10.1116/1.1562477 |
| Appears in Collections: | A1. Articolo in rivista |
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