Please use this identifier to cite or link to this item:
http://hdl.handle.net/2067/32723
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Valentini Luca | en |
dc.contributor.author | Lozzi, L. | en |
dc.contributor.author | Salerni, V. | en |
dc.contributor.author | Armentano, Ilaria | en |
dc.contributor.author | Kenny Jose Maria | en |
dc.contributor.author | Santucci, S. | en |
dc.date.accessioned | 2020-10-20T22:49:44Z | - |
dc.date.available | 2020-10-20T22:49:44Z | - |
dc.date.issued | 2003 | en |
dc.identifier.uri | http://hdl.handle.net/2067/32723 | - |
dc.title | Effect of Thermal Annealing on the Electronic Properties of Nitrogen Doped Amorphous Carbon/p-Type Crystalline Silicon Heterojunction Diodes | en |
dc.type | article | en |
dc.identifier.doi | 10.1116/1.1562477 | en |
dc.relation.issn | 7342101 | en |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS | en |
dc.relation.firstpage | 582 | en |
dc.relation.lastpage | 588 | en |
dc.relation.numberofpages | 7 | en |
dc.relation.conferencename | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS | en |
dc.relation.volume | 21 | en |
dc.relation.issue | 21 | en |
dc.type.miur | 262 | en |
item.fulltext | No Fulltext | - |
item.openairetype | article | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | none | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
crisitem.journal.journalissn | 0734-2101 | - |
crisitem.journal.ance | E094970 | - |
Appears in Collections: | A1. Articolo in rivista |
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