Effect of Thermal Annealing on the Electronic Properties of Nitrogen Doped Amorphous Carbon/p-Type Crystalline Silicon Heterojunction Diodes

Valentini Luca; Lozzi, L.; Salerni, V.; Armentano, Ilaria; Kenny Jose Maria; Santucci, S.

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Please use this identifier to cite or link to this item: http://hdl.handle.net/2067/32723

Title:	Effect of Thermal Annealing on the Electronic Properties of Nitrogen Doped Amorphous Carbon/p-Type Crystalline Silicon Heterojunction Diodes
Authors:	Valentini Luca Lozzi, L. Salerni, V. Armentano, Ilaria Kenny Jose Maria Santucci, S.
Journal:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS
Issue Date:	2003
URI:	http://hdl.handle.net/2067/32723
DOI:	10.1116/1.1562477
Appears in Collections:	A1. Articolo in rivista

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