Effect of Thermal Annealing on the Electronic Properties of Nitrogen Doped Amorphous Carbon/p-Type Crystalline Silicon Heterojunction, Diodes
Author(s)
Date Issued
2003
Type
article
Volume
21
Issue
21
Start Page
582
End Page
588
ISSN
15531813
Conference(s)
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A, AN INTERNATIONAL JOURNAL DEVOTED TO VACUUM, SURFACES, AND FILMS